{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/test.ecinews.fr\/fr\/","author_name":"eeNews Europe","author_url":"https:\/\/test.ecinews.fr\/fr\/author\/eenews-europe\/","title":"M\u00e9moire FRAM 4 Mbits parall\u00e8le compatible SRAM","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"vvdezUCkF3\"><a href=\"https:\/\/test.ecinews.fr\/fr\/memoire-fram-4-mbits-parallele-compatible-sram\/\">M\u00e9moire FRAM 4 Mbits parall\u00e8le compatible SRAM<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/test.ecinews.fr\/fr\/memoire-fram-4-mbits-parallele-compatible-sram\/embed\/#?secret=vvdezUCkF3\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0M\u00e9moire FRAM 4 Mbits parall\u00e8le compatible SRAM\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"vvdezUCkF3\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/test.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci6671_fujitsu_fseufram_pr1063_lo.jpg","thumbnail_width":2100,"thumbnail_height":1500,"description":"Int\u00e9grant une interface parall\u00e8le compatible SRAM, la m\u00e9moire FRAM 4 Mbits MB85R4M2T de Fujitsu Semiconductor est log\u00e9e dans un bo\u00eetier TSOP \u00e0 44 broches totalement compatible avec la SRAM standard \u00e0 basse consommation d'\u00e9nergie. Non volatile et \u00e0 hautes performances en \u00e9criture, elle est particuli\u00e8rement bien adapt\u00e9e pour remplacer la SRAM prot\u00e9g\u00e9e par batterie dans de nombreuses applications comme l'automatisation industrielle, le mat\u00e9riel de bureau, les syst\u00e8mes de s\u00e9curit\u00e9 et les appareils m\u00e9dicaux."}