{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/test.ecinews.fr\/fr\/","author_name":"eeNews Europe","author_url":"https:\/\/test.ecinews.fr\/fr\/author\/eenews-europe\/","title":"MOSFET de puissance en bo\u00eetier \u00e0 \u00e9conomie d'\u00e9nergie","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"SBSWtY14HC\"><a href=\"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-en-boitier-a-economie-denergie\/\">MOSFET de puissance en bo\u00eetier \u00e0 \u00e9conomie d&rsquo;\u00e9nergie<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-en-boitier-a-economie-denergie\/embed\/#?secret=SBSWtY14HC\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0MOSFET de puissance en bo\u00eetier \u00e0 \u00e9conomie d&rsquo;\u00e9nergie\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"SBSWtY14HC\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/test.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci6456_st_logo.jpg","thumbnail_width":151,"thumbnail_height":106,"description":"Gr\u00e2ce \u00e0 son bo\u00eetier TO247-4 \u00e0 4 contacts, le MOSFET MDmesh V \u00e0 super jonction STW57N65M5-4 de STMicroelectronics b\u00e9n\u00e9ficie d'une entr\u00e9e de commande d\u00e9di\u00e9e qui permet d'augmenter le rendement du circuit d'alimentation dans des produits tels que l'\u00e9lectrom\u00e9nager, les t\u00e9l\u00e9viseurs, les ordinateurs, les t\u00e9l\u00e9communications et les alimentations \u00e0 d\u00e9coupage pour serveurs."}