{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/test.ecinews.fr\/fr\/","author_name":"eeNews Europe","author_url":"https:\/\/test.ecinews.fr\/fr\/author\/eenews-europe\/","title":"MOSFET de puissance Superjunction 600V miniatures","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"Mo8Oyv37v2\"><a href=\"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/\">MOSFET de puissance Superjunction 600V miniatures<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/embed\/#?secret=Mo8Oyv37v2\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0MOSFET de puissance Superjunction 600V miniatures\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"Mo8Oyv37v2\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/test.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci3913_toshiba.jpg","thumbnail_width":504,"thumbnail_height":360,"description":"Toshiba Electronics Europe vient d'annoncer que sa technologie MOSFET de puissance DTMOS-IV SJ (superjonction) de nouvelle g\u00e9n\u00e9ration \u00e9tait pour la premi\u00e8re fois disponible en petit bo\u00eetier DFN miniature bas-profil. Les nouveaux transistors MOSFET DTMOS-IV 600V en bo\u00eetier DFN seront id\u00e9aux pour les applications de commutation rapide, dans les alimentations, les ballasts d'\u00e9clairage ou d'autres applications n\u00e9cessitant une solution moins encombrante qu'un bo\u00eetier D2PAK ou DPAK conventionnels."}