{"id":227754,"date":"2013-08-18T22:00:00","date_gmt":"2013-08-18T22:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/hexfet-25-v-a-forte-densite-de-puissance\/"},"modified":"2013-08-18T22:00:00","modified_gmt":"2013-08-18T22:00:00","slug":"hexfet-25-v-a-forte-densite-de-puissance","status":"publish","type":"post","link":"https:\/\/test.ecinews.fr\/fr\/hexfet-25-v-a-forte-densite-de-puissance\/","title":{"rendered":"HEXFET 25 V \u00e0 forte densit\u00e9 de puissance"},"content":{"rendered":"<p>Ces composants embarquent la derni&egrave;re g&eacute;n&eacute;ration de technologie silicium propri&eacute;taire dans un bo&icirc;tier PQFN 5 x 6 mm pour une densit&eacute; de puissance encore in&eacute;gal&eacute;e dans ce format. Ils int&egrave;grent un FETKY monolithique et b&eacute;n&eacute;ficient d&rsquo;une technologie de pointe &agrave; puce retourn&eacute;e assurant une dissipation efficace de la chaleur depuis la source, les MOSFET synchrones, directement vers les plages de masse du circuit imprim&eacute;. Gr&acirc;ce &agrave; ces performances thermiques am&eacute;lior&eacute;es et &agrave; la densit&eacute; de puissance sup&eacute;rieure, un seul de ces composants doubles de 5 x 6 mm peut remplacer deux composants simples de m&ecirc;me taille. Ce bo&icirc;tier tire &eacute;galement profit de la technologie propri&eacute;taire &agrave; agrafe cuivre Copper Clip, d&eacute;j&agrave; utilis&eacute;e au sein des produits PowIRStage et SupIRBuck, et d&rsquo;une couche optimis&eacute;e qui r&eacute;duit de mani&egrave;re significative l&rsquo;inductance parasite pour limiter les oscillations. Cela donne la possibilit&eacute; aux concepteurs d&rsquo;utiliser des MOSFET 25 V &agrave; la place de composants 30 V moins efficaces.<br \/>\nOptimis&eacute;s pour les applications de commande de grille 5 V, ces deux circuits fonctionnent avec tout contr&ocirc;leur ou pilote (Driver). Ils combinent une grande flexibilit&eacute; de conception, avec un courant, un rendement et des fr&eacute;quences sup&eacute;rieures dans un plus faible encombrement que les approches alternatives utilisant deux MOSFET de puissance 30 V discrets.<\/p>\n<\/p>\n<p><a href=\"http:\/\/www.irf.com\/whats-new\/nr130801.html\" target=\"_blank\" title=\"www.irf.com\/whats-new\/nr130801.html\" rel=\"noopener\">www.irf.com\/whats-new\/nr130801.html<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Premiers membres de la famille de composants Power Block, les HEXFET 25 V double canal-N IRFH4251D et IRFH4253D d\u2019International Rectifier sont destin\u00e9s aux applications \u00e0 convertisseurs abaisseurs synchrones DC-DC telles que les \u00e9quipements t\u00e9l\u00e9com et netcom, les serveurs, les cartes graphiques et les ordinateurs de bureau et portables y compris les Ultrabook.<\/p>\n","protected":false},"author":22,"featured_media":227755,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-227754","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>HEXFET 25 V \u00e0 forte densit\u00e9 de puissance ...<\/title>\n<meta name=\"description\" content=\"Premiers membres de la famille de composants Power Block, les HEXFET 25 V double canal-N IRFH4251D et IRFH4253D d\u2019International Rectifier sont destin\u00e9s...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/227754\/\" \/>\n<meta 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