{"id":228406,"date":"2013-11-05T23:00:00","date_gmt":"2013-11-05T23:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/mosfet-de-puissance-superjunction-600v-miniatures\/"},"modified":"2013-11-05T23:00:00","modified_gmt":"2013-11-05T23:00:00","slug":"mosfet-de-puissance-superjunction-600v-miniatures","status":"publish","type":"post","link":"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/","title":{"rendered":"MOSFET de puissance Superjunction 600V miniatures"},"content":{"rendered":"<p>Avec des courants nominaux allant de 9.7A &agrave; plus de 30A, les nouveaux MOSFET 600V de la famille TKxV60W offrent des r&eacute;sistances &agrave; l&rsquo;&eacute;tat passant (RDS(ON)) allant de 0.38&Omega; &agrave; seulement 0.098&Omega;. Le facteur de m&eacute;rite RDS(ON)*Qg assure une commutation &agrave; haut-rendement, tandis que la faible capacitance de sortie (Coss) permet un fonctionnement optimal avec de faibles charges. Chaque dispositif int&egrave;gre &eacute;galement une broche de d&eacute;tection pour la connexion directe d&rsquo;un driver.<br \/>\nLe processus DTMOS-IV de Toshiba produit des transistors MOSFET avec un meilleur coefficient de temp&eacute;rature RDS(ON) que les dispositifs concurrents. Cela permet d&rsquo;obtenir de meilleurs rendements, m&ecirc;me aux temp&eacute;ratures &eacute;lev&eacute;es. Comme les autres dispositifs de la famille Toshiba DTMOS-IV, ces nouveaux MOSFET DFN ont une capacitance porte-drain (Cgd) optimis&eacute;e, offrant un meilleur contr&ocirc;le de commutation dv\/dt. Le support de valeurs dv\/dt plus faibles, permet aussi de r&eacute;duire la tendance aux oscillations dans les circuits &agrave; commutation rapide. Avec ses 8&nbsp;x&nbsp;8&nbsp;mm, l&rsquo;encombrement du module DFN est 20% plus faible que celui d&rsquo;un module D2PAK. Son &eacute;paisseur de 0.85&nbsp;mm seulement est pr&egrave;s de trois fois inf&eacute;rieure &agrave; celle d&rsquo;un DPAK classique, et plus de cinq fois inf&eacute;rieure &agrave; celle d&rsquo;un D2PAK.    <\/p>\n<p><a href=\"http:\/\/www.toshiba-components.com\/pressoffice\/index.asp\" target=\"_blank\" title=\"www.toshiba-components.com\/pressoffice\/index.asp\" rel=\"noopener\">www.toshiba-components.com\/pressoffice\/index.asp<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba Electronics Europe vient d&rsquo;annoncer que sa technologie MOSFET de puissance DTMOS-IV SJ (superjonction) de nouvelle g\u00e9n\u00e9ration \u00e9tait pour la premi\u00e8re fois disponible en petit bo\u00eetier DFN miniature bas-profil. Les nouveaux transistors MOSFET DTMOS-IV 600V en bo\u00eetier DFN seront id\u00e9aux pour les applications de commutation rapide, dans les alimentations, les ballasts d&rsquo;\u00e9clairage ou d&rsquo;autres applications n\u00e9cessitant une solution moins encombrante qu&rsquo;un bo\u00eetier D2PAK ou DPAK conventionnels.<\/p>\n","protected":false},"author":22,"featured_media":228407,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-228406","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>MOSFET de puissance Superjunction 600V miniatures ...<\/title>\n<meta name=\"description\" content=\"Toshiba Electronics Europe vient d&#039;annoncer que sa technologie MOSFET de puissance DTMOS-IV SJ (superjonction) de nouvelle g\u00e9n\u00e9ration \u00e9tait pour la...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/228406\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFET de puissance Superjunction 600V miniatures\" \/>\n<meta property=\"og:description\" content=\"Toshiba Electronics Europe vient d&#039;annoncer que sa technologie MOSFET de puissance DTMOS-IV SJ (superjonction) de nouvelle g\u00e9n\u00e9ration \u00e9tait pour la premi\u00e8re fois disponible en petit bo\u00eetier DFN miniature bas-profil. Les nouveaux transistors MOSFET DTMOS-IV 600V en bo\u00eetier DFN seront id\u00e9aux pour les applications de commutation rapide, dans les alimentations, les ballasts d&#039;\u00e9clairage ou d&#039;autres applications n\u00e9cessitant une solution moins encombrante qu&#039;un bo\u00eetier D2PAK ou DPAK conventionnels.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/228406\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2013-11-05T23:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/test.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci3913_toshiba.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"504\" \/>\n\t<meta property=\"og:image:height\" content=\"360\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"eeNews Europe\" \/>\n<meta name=\"twitter:card\" 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miniatures\",\"datePublished\":\"2013-11-05T23:00:00+00:00\",\"dateModified\":\"2013-11-05T23:00:00+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/\"},\"wordCount\":255,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\"},\"articleSection\":[\"Nouveaux produits\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/\",\"url\":\"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/\",\"name\":\"MOSFET de puissance Superjunction 600V miniatures -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#website\"},\"datePublished\":\"2013-11-05T23:00:00+00:00\",\"dateModified\":\"2013-11-05T23:00:00+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/test.ecinews.fr\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"MOSFET de puissance Superjunction 600V miniatures\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/fr\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/fr\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/fr\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4\",\"name\":\"eeNews Europe\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"caption\":\"eeNews Europe\"}}]}<\/script>","yoast_head_json":{"title":"MOSFET de puissance Superjunction 600V miniatures ...","description":"Toshiba Electronics Europe vient d'annoncer que sa technologie MOSFET de puissance DTMOS-IV SJ (superjonction) de nouvelle g\u00e9n\u00e9ration \u00e9tait pour la...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/228406\/","og_locale":"fr_FR","og_type":"article","og_title":"MOSFET de puissance Superjunction 600V miniatures","og_description":"Toshiba Electronics Europe vient d'annoncer que sa technologie MOSFET de puissance DTMOS-IV SJ (superjonction) de nouvelle g\u00e9n\u00e9ration \u00e9tait pour la premi\u00e8re fois disponible en petit bo\u00eetier DFN miniature bas-profil. Les nouveaux transistors MOSFET DTMOS-IV 600V en bo\u00eetier DFN seront id\u00e9aux pour les applications de commutation rapide, dans les alimentations, les ballasts d'\u00e9clairage ou d'autres applications n\u00e9cessitant une solution moins encombrante qu'un bo\u00eetier D2PAK ou DPAK conventionnels.","og_url":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/228406\/","og_site_name":"EENewsEurope","article_published_time":"2013-11-05T23:00:00+00:00","og_image":[{"width":504,"height":360,"url":"https:\/\/test.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci3913_toshiba.jpg","type":"image\/jpeg"}],"author":"eeNews Europe","twitter_card":"summary_large_image","twitter_misc":{"Written by":"eeNews Europe","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/#article","isPartOf":{"@id":"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/"},"author":{"name":"eeNews Europe","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4"},"headline":"MOSFET de puissance Superjunction 600V miniatures","datePublished":"2013-11-05T23:00:00+00:00","dateModified":"2013-11-05T23:00:00+00:00","mainEntityOfPage":{"@id":"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/"},"wordCount":255,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#organization"},"articleSection":["Nouveaux produits"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/","url":"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/","name":"MOSFET de puissance Superjunction 600V miniatures -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#website"},"datePublished":"2013-11-05T23:00:00+00:00","dateModified":"2013-11-05T23:00:00+00:00","breadcrumb":{"@id":"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/test.ecinews.fr\/fr\/mosfet-de-puissance-superjunction-600v-miniatures\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/test.ecinews.fr\/fr\/"},{"@type":"ListItem","position":2,"name":"MOSFET de puissance Superjunction 600V miniatures"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/fr\/#website","url":"https:\/\/www.eenewseurope.com\/fr\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/fr\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/fr\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/fr\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4","name":"eeNews Europe","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22","url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","caption":"eeNews Europe"}}]}},"authors":[{"term_id":1149,"user_id":22,"is_guest":0,"slug":"eenews-europe","display_name":"eeNews Europe","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/228406"}],"collection":[{"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/22"}],"replies":[{"embeddable":true,"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=228406"}],"version-history":[{"count":0,"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/228406\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/228407"}],"wp:attachment":[{"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=228406"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=228406"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=228406"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=228406"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=228406"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}