{"id":231428,"date":"2014-11-06T23:00:00","date_gmt":"2014-11-06T23:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/mosfet-basse-tension-en-boitiers-a-haut-rendement-thermique\/"},"modified":"2014-11-06T23:00:00","modified_gmt":"2014-11-06T23:00:00","slug":"mosfet-basse-tension-en-boitiers-a-haut-rendement-thermique","status":"publish","type":"post","link":"https:\/\/test.ecinews.fr\/fr\/mosfet-basse-tension-en-boitiers-a-haut-rendement-thermique\/","title":{"rendered":"MOSFET basse tension en bo\u00eetiers \u00e0 haut rendement thermique"},"content":{"rendered":"

Le boîtier DSOP Advance partage la même empreinte de 5 x 6 mm que les dispositifs SOP Advance. Lors de tests comparatifs, en utilisant un radiateur approprié, les températures de fonctionnement ont pu être réduites de plus de 34% pour des MOSFET 30 V fonctionnant avec des courants de plus de 30 A. En outre, la résistance thermique réduite de ce boîtier permet, dans certains cas, de se passer de radiateur.
\nCes boîtiers seront proposés sur sa famille de MOSFET existante UMOS VIII-H et sur celle de dernière génération UMOS IX-H. Ces transistors combinent une des plus faibles résistances à l’état passant RDS(on) du marché et une très faible capacitance de sortie pour offrir des performances de commutation assurant un très haut rendement. Un certain nombre de MOSFET avec des tensions nominales comprises entre 30 V et 100 V pourront également être équipés de ce boîtier.
\nLes applications ciblées par ces produits sont notamment les projets de commutation hautes-performances avec une densité de puissance élevée, notamment les circuits de redressement synchrones présents dans les alimentations de serveurs ou d’équipements de télécommunication, ainsi que l’outillage électroportatif.<\/p>\n

www.toshiba-components.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

Pour am\u00e9liorer leur dissipation thermique, les MOSFET basse tension \u00e0 haut rendement de Toshiba Electronics sont d\u00e9sormais propos\u00e9s en bo\u00eetiers ultra-compacts DSOP Advance \u00e0 refroidissement sur deux faces. Ainsi, les concepteurs d’applications \u00e0 tr\u00e8s haute densit\u00e9 de composants vont pouvoir r\u00e9duire la temp\u00e9rature du circuit imprim\u00e9 et am\u00e9liorer les performances sans p\u00e9naliser l’encombrement sur la carte.<\/p>\n","protected":false},"author":22,"featured_media":231429,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-231428","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"MOSFET basse tension en bo\u00eetiers \u00e0 haut rendement thermique ...<\/title>\n<meta name=\"description\" content=\"Pour am\u00e9liorer leur dissipation thermique, les MOSFET basse tension \u00e0 haut rendement de Toshiba Electronics sont d\u00e9sormais propos\u00e9s en bo\u00eetiers...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/231428\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFET basse tension en bo\u00eetiers \u00e0 haut rendement thermique\" \/>\n<meta property=\"og:description\" content=\"Pour am\u00e9liorer leur dissipation thermique, les MOSFET basse tension \u00e0 haut rendement de Toshiba Electronics sont d\u00e9sormais propos\u00e9s en bo\u00eetiers ultra-compacts DSOP Advance \u00e0 refroidissement sur deux faces. Ainsi, les concepteurs d'applications \u00e0 tr\u00e8s haute densit\u00e9 de composants vont pouvoir r\u00e9duire la temp\u00e9rature du circuit imprim\u00e9 et am\u00e9liorer les performances sans p\u00e9naliser l'encombrement sur la carte.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/test.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/231428\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2014-11-06T23:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/test.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci7025_toshiba_6567a_lres.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"504\" \/>\n\t<meta property=\"og:image:height\" content=\"360\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"eeNews Europe\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" 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