{"id":475421,"date":"2025-03-17T18:15:42","date_gmt":"2025-03-17T17:15:42","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=475421"},"modified":"2025-03-17T18:15:42","modified_gmt":"2025-03-17T17:15:42","slug":"boost-spectaculaire-de-la-frequence-de-commutation-de-mosfet-sic","status":"publish","type":"post","link":"https:\/\/test.ecinews.fr\/fr\/boost-spectaculaire-de-la-frequence-de-commutation-de-mosfet-sic\/","title":{"rendered":"Boost spectaculaire de la fr\u00e9quence de commutation de MOSFET SiC"},"content":{"rendered":"<p>La startup am\u00e9ricaine NoMIS Power a consid\u00e9rablement am\u00e9lior\u00e9 le temps de r\u00e9sistance aux courts-circuits (SCWT) des MOSFET SiC sans augmenter la r\u00e9sistance \u00e0 l&rsquo;enclenchement.<\/p>\n<p>Cela permet de relever l&rsquo;un des principaux d\u00e9fis qui limitent l&rsquo;adoption g\u00e9n\u00e9ralis\u00e9e de la technologie SiC dans les applications de haute puissance et permet un fonctionnement \u00e0 plus haute fr\u00e9quence. Cela permet d&rsquo;utiliser des circuits magn\u00e9tiques plus petits pour des syst\u00e8mes d&rsquo;alimentation plus petits et plus l\u00e9gers.<\/p>\n<p>Au lieu d&rsquo;un SCWT habituel de 2 \u00e0 3us, le dernier MOSFET de 1200 V, 80 m\u03a9 a un temps de 5 \u00b5s. Cela am\u00e9liore la fiabilit\u00e9 des composants. Les am\u00e9liorations du bo\u00eetier qui ont un impact sur la capacit\u00e9 thermique entre la jonction et le bo\u00eetier, ainsi que les nouvelles techniques de gestion thermique avec des coefficients de transfert de chaleur \u00e9lev\u00e9s, augmentent \u00e9galement le SCWT global jusqu&rsquo;\u00e0 4 fois celui des composants actuels.<\/p>\n<p>Ce r\u00e9sultat a \u00e9t\u00e9 obtenu en ajustant le compromis entre la r\u00e9sistance sp\u00e9cifique \u00e0 l&rsquo;enclenchement (Ron,sp) et le SCWT \u00e0 l&rsquo;aide d&rsquo;une conception propri\u00e9taire de fabrication de MOSFET SiC et d&rsquo;un flux de processus, et peut \u00eatre g\u00e9r\u00e9 en fonction de l&rsquo;application sp\u00e9cifique. L&rsquo;optimisation compl\u00e8te des MOSFET SiC avec une longue SCWT en utilisant cette approche permettra \u00e0 NoMIS Power d&rsquo;\u00e9tendre encore la SCWT tout en maintenant un impact n\u00e9gligeable sur la Ron. L&rsquo;entreprise d\u00e9riv\u00e9e de l&rsquo;universit\u00e9, bas\u00e9e \u00e0 Albany, dans l&rsquo;\u00c9tat de New York, a pr\u00e9sent\u00e9 des <a href=\"https:\/\/www.eenewseurope.com\/en\/power-advances-at-the-70th-iedm\/\">am\u00e9liorations significatives du composant lors de la conf\u00e9rence IEDM de l&rsquo;ann\u00e9e derni\u00e8re<\/a>.<\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/nomis-power-launches-1200v-sic-mosfet\/\">Nomis Power lance un MOSFET SiC 1200V<\/a><\/li>\n<\/ul>\n<p>Les composants SiC sont prot\u00e9g\u00e9s contre les d\u00e9fauts latents et offrent une conception plus facile de la d\u00e9-saturation du pilote de grille (dSat) pour un di\/dt et un dv\/dt \u00e9lev\u00e9s, ce qui permet des fr\u00e9quences de commutation plus rapides pouvant aller jusqu&rsquo;\u00e0 des centaines de kHz. Un temps de r\u00e9sistance aux courts-circuits plus long garantit des performances robustes et fiables dans les applications critiques, renfor\u00e7ant ainsi la robustesse des syst\u00e8mes de puissance bas\u00e9s sur le SiC.<\/p>\n<p>Les applications sensibles aux inf\u00e9rences \u00e9lectromagn\u00e9tiques qui ne peuvent pas s&rsquo;appuyer uniquement sur des sch\u00e9mas de contr\u00f4le et de d\u00e9tection num\u00e9riques pour d\u00e9tecter et agir sur les \u00e9v\u00e9nements de court-circuit pourront d\u00e9sormais utiliser efficacement les MOSFET SiC.<\/p>\n<p>\u00ab\u00a0Chez NoMIS Power, nous nous sommes beaucoup pench\u00e9s sur l&rsquo;ing\u00e9nierie de l&rsquo;architecture des composants, ce qui a conduit \u00e0 une avanc\u00e9e significative dans le temps de r\u00e9sistance aux courts-circuits du SiC\u00a0\u00bb, a d\u00e9clar\u00e9 Woongje Sung, directeur de la technologie chez NoMIS Power. \u00ab\u00a0Nous pensons que ce r\u00e9sultat offre des avantages pr\u00e9cieux \u00e0 la communaut\u00e9 de l&rsquo;\u00e9lectronique de puissance, en aidant les ing\u00e9nieurs \u00e0 int\u00e9grer les solutions SiC avec une plus grande confiance dans les applications o\u00f9 la robustesse est essentielle.\u00a0\u00bb<\/p>\n<p>Les composants seront pr\u00e9sent\u00e9s \u00e0 l&rsquo;APEC 2025 cette semaine \u00e0 Atlanta, GA.<\/p>\n<p><a href=\"https:\/\/c212.net\/c\/link\/?t=0&amp;l=en&amp;o=4383127-1&amp;h=3549832875&amp;u=http%3A%2F%2Fwww.nomispower.com%2F&amp;a=www.nomispower.com\">www.nomispower.com.<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>La startup am\u00e9ricaine NoMIS Power a consid\u00e9rablement am\u00e9lior\u00e9 le temps de r\u00e9sistance aux courts-circuits (SCWT) des MOSFET SiC sans augmenter la r\u00e9sistance \u00e0 l&rsquo;enclenchement. Cela permet de relever l&rsquo;un des principaux d\u00e9fis qui limitent l&rsquo;adoption g\u00e9n\u00e9ralis\u00e9e de la technologie SiC dans les applications de haute puissance et permet un fonctionnement \u00e0 plus haute fr\u00e9quence. Cela [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":475414,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[883],"tags":[1164,2265],"domains":[47],"ppma_author":[3640],"class_list":["post-475421","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-technologies","tag-composants-de-puissance","tag-sic-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Boost spectaculaire de la fr\u00e9quence de commutation de MOSFET SiC ...<\/title>\n<meta name=\"description\" content=\"NoMIS Power a consid\u00e9rablement am\u00e9lior\u00e9 le temps de r\u00e9sistance aux courts-circuits (SCWT) des MOSFET SiC sans augmenter la Ron.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" 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